Titanium nitride (TiN) film was prepared by metallic plasma-based ion implantation and deposition (PBII&D). The pulse voltage of -10 kV-amplitude and 20 μs-width was repeatedly applied to the substrate at a frequency of 400 Hz. The plasma was generated by a titanium cathodic arc in nitrogen gas. The nitrogen pressure was varied from 3 to 18 Pa, and the effects of pressure on the structure of the film were discussed. Nearly stoichiometric TiN films were prepared by PBII&D using a cathodic arc with a high deposition rate. A gold-colored film with high crystallinity and preferred (200) orientation was formed at pressure in a range between 5.6 and 8.5 Pa. The films had fine grains, and showed a high microhardness. The film prepared without an introduction of enough ion energy showed poor crystallinity. © 2003 Elsevier Science B.V. All rights reserved.
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