Effects of pressure on the structure of titanium nitride film in the preparation using metallic plasma-based ion implantation and deposition

  • Yukimura K
  • Muraho T
  • Kumagai M
 et al. 
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Abstract

Titanium nitride (TiN) film was prepared by metallic plasma-based ion implantation and deposition (PBII&D). The pulse voltage of -10 kV-amplitude and 20 μs-width was repeatedly applied to the substrate at a frequency of 400 Hz. The plasma was generated by a titanium cathodic arc in nitrogen gas. The nitrogen pressure was varied from 3 to 18 Pa, and the effects of pressure on the structure of the film were discussed. Nearly stoichiometric TiN films were prepared by PBII&D using a cathodic arc with a high deposition rate. A gold-colored film with high crystallinity and preferred (200) orientation was formed at pressure in a range between 5.6 and 8.5 Pa. The films had fine grains, and showed a high microhardness. The film prepared without an introduction of enough ion energy showed poor crystallinity. © 2003 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • Deposition
  • Microhardness
  • Plasma-based ion implantation
  • Structure
  • Titanium nitride

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Authors

  • Ken Yukimura

  • Tomoyuki Muraho

  • Masao Kumagai

  • Hidenori Saito

  • Mamoru Kohata

  • Toshiro Maruyama

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