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We have studied the contribution of Cr 3d states to the valence bands of CdCr2Se4by means of the resonant enhancement of the Cr 3d photoemission cross section near the Cr 3p → 3d core excitation ( h {combining short stroke overlay}ω = 47 eV). The Cr 3d partial density of states (DOS) is evaluated from the spectra taken on and off resonance. A strong peak in the partial DOS located at 1.3 eV below the valence band maximum is assigned to the t2g↑ bands without strong dispersion. The second peak located at 2.9 eV is mainly derived from the eg↑ and eg↓ bands, which are spread over in the valence band region between 0 and 5 eV due to the strong p-d hybridization. The results are qualitatively interpreted in terms of a molecular-orbital level-scheme and compared with the results of band-structure calculation based on the DV-Xα method. © 1989.




Taniguchi, M., Fujimori, A., & Suga, S. (1989). Electronic structure of magnetic semiconductor CdCr2Se4: Cr 3d partial density of states and p-d hybridization. Solid State Communications, 70(2), 191–194. https://doi.org/10.1016/0038-1098(89)90972-1

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