Epitaxial silicide formation in the Mg/Si(111) system

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Abstract

The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level. © 1993.

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Wigren, C., Andersen, J. N., Nyholm, R., & Karlsson, U. O. (1993). Epitaxial silicide formation in the Mg/Si(111) system. Surface Science, 289(3), 290–296. https://doi.org/10.1016/0039-6028(93)90661-3

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