Epitaxial silicide formation in the Mg/Si(111) system

Citations of this article
Mendeley users who have this article in their library.
Get full text


The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level. © 1993.




Wigren, C., Andersen, J. N., Nyholm, R., & Karlsson, U. O. (1993). Epitaxial silicide formation in the Mg/Si(111) system. Surface Science, 289(3), 290–296. https://doi.org/10.1016/0039-6028(93)90661-3

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free