Epitaxial silicide formation in the Mg/Si(111) system

Abstract

The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level. © 1993.