Excitation of hypersound in n-GaN films

Citations of this article
Mendeley users who have this article in their library.
Get full text


The aim of this paper is the analysis of hypersound excitation in GaN films. Simulation of process is presented for a case of a thin film geometry on a non-piezoelectric substrate. The frequency range considered is from 50 GHz up to 200 GHz. The excitation is due to coupling with space charge waves (SCWs) in GaN film. The amplification of SCWs is related with negative differential conductivity in GaN films. Possible spatial increments are obtained. The amplified SCWs can excite hypersonic waves at the same frequency due to piezoeffect and deformation potential mechanisms. The first effect is stronger and causes an effective resonant excitation of hypersonic waves in the case of full mechanic contact of GaN film and non-piezoelectric substrate. © 2008 Elsevier Ltd. All rights reserved.




Diaz, F., Grimalsky, V., Tecpoyotl, M., Escobedo, J., & Koshevaya, S. (2008). Excitation of hypersound in n-GaN films. Microelectronics Journal, 39(5), 740–743. https://doi.org/10.1016/j.mejo.2007.12.007

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free