Extrinsic photoluminescence of GaAs-GaAlAs quantum wells

  • Xu Z
  • Chen Z
  • Teng D
 et al. 
  • 2


    Mendeley users who have this article in their library.
  • 3


    Citations of this article.


Both the extrinsic luminescence related to the impurities near the well center and that related to the impurities at the GaAs-GaAlAs interfaces have been observed from all our samples with well widths ranging from 78 to 145 A. This identification has been confirmed by the dependence of the extrinsic photoluminescence on the excitation intensities and temperature. Relatively strong interface-related luminescence is believed to be due to the presence of more trapped impurities at the interfaces. © 1986.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • Z. Y. Xu

  • Z. G. Chen

  • D. Teng

  • W. H. Zhuang

  • J. Y. Xu

  • J. Z. Xu

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free