Abstract
Both the extrinsic luminescence related to the impurities near the well center and that related to the impurities at the GaAs-GaAlAs interfaces have been observed from all our samples with well widths ranging from 78 to 145 A. This identification has been confirmed by the dependence of the extrinsic photoluminescence on the excitation intensities and temperature. Relatively strong interface-related luminescence is believed to be due to the presence of more trapped impurities at the interfaces. © 1986.
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CITATION STYLE
Xu, Z. Y., Chen, Z. G., Teng, D., Zhuang, W. H., Xu, J. Y., Xu, J. Z., … Kong, M. Y. (1986). Extrinsic photoluminescence of GaAs-GaAlAs quantum wells. Surface Science, 174(1–3), 216–220. https://doi.org/10.1016/0039-6028(86)90411-5
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