AlGaInP epilayers of different Al compositions and AlGaInP/GaInP multiple quantum well (MQW) structures have been grown by metalorganic chemical vapor deposition using tertiarybutylphosphine (TBP) as phosphorus precursor. Low-temperature photoluminescence (PL) measurements have been performed to evaluate the quality of the materials. The line widths of the PL spectra of AlGaInP epilayers grown with TBP are comparable to those grown using PH3, suggesting the high quality of AlGaInP grown by TBP. Finally, AlGaInP MQW red laser structures have been grown, and for the first time the electrically pumped AlGaInP red lasers grown by TBP have been reported with the central emission wavelength of 645nm, indicating that TBP can be used to grow high quality AlGaInP epilayers and AlGaInP-based red lasers in parallel with the widely used highly toxic gas source PH3. © 2003 Elsevier Science B.V. All rights reserved.
Dong, J. R., Teng, J. H., Chua, S. J., Wang, Y. J., Foo, B. C., Yuan, H. R., & Yuan, S. (2003). High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers. Journal of Crystal Growth, 253(1–4), 161–166. https://doi.org/10.1016/S0022-0248(03)01080-7