A hot implantation study on the evolution of defects in He ion implanted MgO(1 0 0)

  • Fedorov A
  • Van Huis M
  • Van Veen A
  • 2


    Mendeley users who have this article in their library.
  • 4


    Citations of this article.


Ion implantation at elevated temperature, so-called hot implantation, was used to study nucleation and thermal stability of the defects. In this work, MgO(1 0 0) single crystal samples were implanted with 30 keV He ions at various implantation temperatures. The implantation doses ranged from 1014to 1016cm-2. The implantation introduced defects were subsequently studied by thermal helium desorption spectroscopy (THDS) and Doppler broadening positron beam analysis (PBA). The THDS study provides vital information on the kinetics of He release from the sample. PBA technique, being sensitive to the open volume defects, provides complementary information on cavity evolution. The THD study has shown that in most cases helium release is characterised by the activation energy of Q = 4.7 ± 0.5 eV with the maximum release temperature of Tmax= 1830 K. By applying first order desorption model the pre-exponent factor is estimated as ν = 4.3 × 1011s-1. © 2002 Published by Elsevier Science B.V.

Author-supplied keywords

  • He ion implantation
  • MgO
  • Thermal desorption

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • A. V. Fedorov

  • M. A. Van Huis

  • A. Van Veen

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free