Abstract
Novel applications require low-voltage PowerMOSFETs to be also used in the thermally unstable portion of their transfer-characteristic. By means of fast transient thermal measurements, this paper shows the formation of hotspots on the chip surface in such conditions and investigates the influence of self-heating mechanisms, in unstable as well as in stable operation. Simulations with accurate device models are performed to gain more insight into the causes of the observed effects. © 2003 Elsevier Ltd. All rights reserved.
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CITATION STYLE
Castellazzi, A., Kartal, V., Kraus, R., Seliger, N., Honsberg-Riedl, M., & Schmitt-Landsiedel, D. (2003). Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET’s. In Microelectronics Reliability (Vol. 43, pp. 1877–1882). https://doi.org/10.1016/S0026-2714(03)00319-6
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