Hydrogen in UHV deposited FeTi thin films

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Abstract

FeTi thin films of thickness 1550 A0were prepared in UHV at 10-8Torr pressure onto glass substrate. Thickness of the FeTi thin films and the content of hydrogen in films was measured by quartz crystal thickness monitor. In situ measurement shows that the resistance decreases with increase in thickness of the film. During hydrogen absorption in FeTi thin films, hydrogen pressure was varied between 10-8Torr to 1 atm. The resistance of film was found to increase due to hydrogen exposure and the value of H/M was found to vary between 0.03 and 1.05 and that of H at% 3-50, in the hydrogen pressure range between 10-8Torr to 1 atm. A relation was established between content of hydrogen in films and its resistance. © 2001 International Association for Hydrogen Energy. Published by Elsevier Science Ltd. All rights reserved.

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Jain, I. P., Devi, B., & Williamson, A. (2001). Hydrogen in UHV deposited FeTi thin films. International Journal of Hydrogen Energy, 26(11), 1183–1187. https://doi.org/10.1016/S0360-3199(01)00050-7

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