The use of laser and infrared scanning techniques in reliability assurance

  • Edwards W
  • 1

    Readers

    Mendeley users who have this article in their library.
  • 2

    Citations

    Citations of this article.

Abstract

Applications of the laser as a non-damaging probe of semiconductor devices are reviewed. In-focus laser and infrared scanning may be carried out over relatively large areas of these devices with the electronically controlled, mechanical scanners described here. Topograms of the response of MOS and bipolar circuits to a spirally-scanned laser beam are presented. The detection of faults, the measurement of material and device properties, and the location of the information content in memory circuits are demonstrated. The same scanners have been used to obtain infrared emissive pictures of operating devices and of the diffused regions in silicon slices. Infrared pictures can be interpreted in terms of device temperature, current distribution and material doping densities. Although the laser may be used to locate faults, it is also valuable as a means of providing signals to a circuit and of introducing a temporary anaesthetization or fault at a circuit node as an aid in the computer checking of LSI circuits. © 1979.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • W. D. Edwards

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free