Metal-insulator-metal many-layer systems

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In this work we present the results of investigations of metal-insulator-metal (MIM) systems based on silicon oxynitride in a wide temperature range (4-300 K) and short voltage impulse regime, and an investigation of conduction and emission current noise. The investigations allowed us to understand better the mechanism by which MIM systems work and to obtain additional characteristics for their practical use as non-heated cathodes, which seems to be useful for special electronics problem solving. © 1991.




Yankelevitch, Y., Barengolz, Y., & Khaskelberg, M. (1991). Metal-insulator-metal many-layer systems. Thin Solid Films, 203(2), 203–212.

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