Metal-insulator-metal many-layer systems

  • Yankelevitch Y
  • Barengolz Y
  • Khaskelberg M
  • 3

    Readers

    Mendeley users who have this article in their library.
  • 5

    Citations

    Citations of this article.

Abstract

In this work we present the results of investigations of metal-insulator-metal (MIM) systems based on silicon oxynitride in a wide temperature range (4-300 K) and short voltage impulse regime, and an investigation of conduction and emission current noise. The investigations allowed us to understand better the mechanism by which MIM systems work and to obtain additional characteristics for their practical use as non-heated cathodes, which seems to be useful for special electronics problem solving. © 1991.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Yu Yankelevitch

  • Y. Barengolz

  • M. Khaskelberg

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free