We present a fast, deterministic solution method for the coupled electron-phonon Boltzmann equations. This physically motivated, discrete model is used for studying the transport properties of GaAs in response to a time-depending external electric field. We especially point out the influence of the Rees effect. As for checking the reliability of our results, they are compared with Monte Carlo calculations for the same physical situation. The interesting steady state solutions of the electron distribution functions for the multivalley regime in GaAs are discussed. © 2004 Elsevier B.V. All rights reserved.
Galler, M., & Schürrer, F. (2005). Multigroup equations to the hot-electron hot-phonon system in III-V compound semiconductors. Computer Methods in Applied Mechanics and Engineering, 194(25–26), 2806–2818. https://doi.org/10.1016/j.cma.2004.07.027