Noise characteristics in low-impedance NiFe/Al2O3/NiFe tunnel junctions

  • Aoki Y
  • Kinoshita H
  • Mizuno T
 et al. 
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Abstract

We have studied the low-frequency voltage noise in micron-scale magnetic tunnel junctions. Random telegraph noise (RTN) dominates over 1/f noise in the switching region of magnetic hysteresis loops, suggesting that RTN comes mostly from local magnetization fluctuations. The temperature dependence of the 1/f noise and the size of the magnetic fluctuators responsible for the RTN are discussed. © 2002 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • 1/f noise
  • Magnetoresistance-tunnel junction
  • Random telegraph noise

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Authors

  • Y. Aoki

  • H. Kinoshita

  • T. Mizuno

  • H. Sugawara

  • H. Sato

  • K. Matsuda

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