We have studied the low-frequency voltage noise in micron-scale magnetic tunnel junctions. Random telegraph noise (RTN) dominates over 1/f noise in the switching region of magnetic hysteresis loops, suggesting that RTN comes mostly from local magnetization fluctuations. The temperature dependence of the 1/f noise and the size of the magnetic fluctuators responsible for the RTN are discussed. © 2002 Elsevier Science B.V. All rights reserved.
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