Abstract
We have studied the low-frequency voltage noise in micron-scale magnetic tunnel junctions. Random telegraph noise (RTN) dominates over 1/f noise in the switching region of magnetic hysteresis loops, suggesting that RTN comes mostly from local magnetization fluctuations. The temperature dependence of the 1/f noise and the size of the magnetic fluctuators responsible for the RTN are discussed. © 2002 Elsevier Science B.V. All rights reserved.
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Aoki, Y., Kinoshita, H., Mizuno, T., Sugawara, H., Sato, H., Matsuda, K., … Tsuge, H. (2002). Noise characteristics in low-impedance NiFe/Al2O3/NiFe tunnel junctions. Journal of Magnetism and Magnetic Materials, 240(1–3), 134–136. https://doi.org/10.1016/S0304-8853(01)00735-1
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