OMVPE growth of AlP/GaP superlattices using tertiarybutylphosphine as a phosphorus source

Abstract

AlGaP layers and AlP/GaP superlattices were grown by atmospheric pressure OMVPE at low temperature on GaP substrates using tertiarybutylphosphine (TBP) as a phosphorus source for safety and using (NH4)2Sx solution for surface stabilization. High crystalline quality AlGaP epi-layers with specular surfaces were obtained at relatively low growth temperatures ( <755°C) by using a (NH4)2Sx surface treatment. The AlP/GaP superlattices were grown at 725°C with a V/III ratio of 20 by using the (NH4)2Sx treatment. The X-ray diffraction profile showed satellite reflection peaks up to as high as fifth order for the (AlP)17/(GaP)17 superlattice. © 1992.