Photoluminescence and optically detected impact ionization studies of GaInAs/InP strained layer superlattices

Abstract

An investigation of strained layer superlattices in which GaxIn1-xAs multilayer structures have been grown lattice mismatched to InP substrates is reported. The photoluminescence (PL) properties of these layers were studied under the influence of microwave irradiation (24 GHz). Using the optically detected impact ionization technique, it is possible to separate and identify the different recombinations in the quantum wells. The advantage of this technique compared to standard PL is demonstrated. © 1991.