Abstract
SiC thin specimens were amorphized with 30 keV Ne+ or 4.5 keV He+ irradiations at room temperature and then annealed in a transmission electron microscope (TEM). The energy and flux of these ion species were determined in order to get similar dpa profiles in depth and similar dpa rates. The peak ion implantation of He was estimated to be about five times as large as that of Ne for the same peak dpa. The crystal nucleation occurred with annealing in the case of 6.3 dpa (peak) He irradiation, on the other hand, it did not occur in the case of 15 dpa (peak) Ne irradiation. On the basis of the obtained results, it is shown that the crystal nucleation was promoted by the implantation of the inert gas atoms. © 2005 Elsevier B.V. All rights reserved.
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Aihara, J., Hojo, T., Furuno, S., Ishihara, M., Sawa, K., Yamamoto, H., & Hojou, K. (2005). Recrystallization behavior in SiC amorphized with He or Ne irradiation. In Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (Vol. 241, pp. 559–562). https://doi.org/10.1016/j.nimb.2005.07.068
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