Structural defects and dislocation-related photoluminescence in erbium-implanted silicon

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Abstract

Structural defects and optical features of p-type Cz-Si after implantation of erbium ions with 1 MeV energy and 1 × 1014cm-2dose followed by annealing at (620-1100 °C) for 0.5-1.0 h in chlorine-containing atmosphere (CCA) or argon have been studied by transmission electron microscopy (TEM), optical microscopy in combination with selective chemical etching, and photoluminescence (PL). High temperature annealing in the chlorine-containing ambience gives rise to perfect prismatic dislocation loops as well as 60° and pure edge dislocations with dominant dislocation-related lines in the PL spectrum. Pure edge dislocations are responsible for the appearance of the lines. The Er-related lines due to the intra-4f shell transitions in the rare earth ions dominate in the PL spectra and no structural defects are observed after high temperature annealing in argon. The role of the intrinsic point defects in the transformation of structural defects and optically active centers is discussed. © 2002 Elsevier Science B.V. All rights reserved.

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Sobolev, N. A., Emel’yanov, A. M., Shek, E. I., Sakharov, V. I., Serenkov, I. T., Nikolaev, Y. A., … Pizzini, S. (2002). Structural defects and dislocation-related photoluminescence in erbium-implanted silicon. In Materials Science and Engineering B: Solid-State Materials for Advanced Technology (Vol. 91–92, pp. 167–169). https://doi.org/10.1016/S0921-5107(01)01008-X

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