Structure of non-stoichiometric Sr-Bi-Nb-O thin films grown by PLD

  • Duclère J
  • Perrin A
  • Guilloux-Viry M
 et al. 
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A quantitative analysis of stacking faults in a bismuth deficient SBN film, grown using a laser-pulsed deposition technique, has been performed by X-ray diffraction. The stacking faults are non-uniformly distributed in the film forming a mixture of two disordered phases, namely m=2 phase containing stacking faults in the form of m=3 fragments and m=3 phase containing stacking faults in the form of m=2 fragments. © 2004 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • A1. Planar defects
  • A1. X-ray diffraction
  • A3. Vapour-phase epitaxy
  • B1. Bismuth compounds
  • B2. Ferroelectric materials

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  • J. R. Duclère

  • A. Perrin

  • M. Guilloux-Viry

  • L. Olikhovska

  • A. Ustinov

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