A quantitative analysis of stacking faults in a bismuth deficient SBN film, grown using a laser-pulsed deposition technique, has been performed by X-ray diffraction. The stacking faults are non-uniformly distributed in the film forming a mixture of two disordered phases, namely m=2 phase containing stacking faults in the form of m=3 fragments and m=3 phase containing stacking faults in the form of m=2 fragments. © 2004 Elsevier B.V. All rights reserved.
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