Study of the band discontinuities at the a-SiH/c-Si interface by internal photoemission

  • Cuniot M
  • Marfaing Y
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Abstract

We get information about the relative location of the energy bands at the a-SiH/c-Si interface by measuring the internal photoemission yield of electrons from the valence band of c-Si into the conduction band of a-SiH. Results show little if any valence band discontinuity at the interface whatever is the bandgap value of the amorphous layer. © 1985.

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Authors

  • M. Cuniot

  • Y. Marfaing

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