Study of the band discontinuities at the a-SiH/c-Si interface by internal photoemission

Abstract

We get information about the relative location of the energy bands at the a-SiH/c-Si interface by measuring the internal photoemission yield of electrons from the valence band of c-Si into the conduction band of a-SiH. Results show little if any valence band discontinuity at the interface whatever is the bandgap value of the amorphous layer. © 1985.