Study of the band discontinuities at the a-SiH/c-Si interface by internal photoemission

12Citations
Citations of this article
4Readers
Mendeley users who have this article in their library.
Get full text

Abstract

We get information about the relative location of the energy bands at the a-SiH/c-Si interface by measuring the internal photoemission yield of electrons from the valence band of c-Si into the conduction band of a-SiH. Results show little if any valence band discontinuity at the interface whatever is the bandgap value of the amorphous layer. © 1985.

Cite

CITATION STYLE

APA

Cuniot, M., & Marfaing, Y. (1985). Study of the band discontinuities at the a-SiH/c-Si interface by internal photoemission. Journal of Non-Crystalline Solids, 7778(PART 2), 987–990. https://doi.org/10.1016/0022-3093(85)90826-9

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free