We get information about the relative location of the energy bands at the a-SiH/c-Si interface by measuring the internal photoemission yield of electrons from the valence band of c-Si into the conduction band of a-SiH. Results show little if any valence band discontinuity at the interface whatever is the bandgap value of the amorphous layer. © 1985.
Cuniot, M., & Marfaing, Y. (1985). Study of the band discontinuities at the a-SiH/c-Si interface by internal photoemission. Journal of Non-Crystalline Solids, 77–78(PART 2), 987–990. https://doi.org/10.1016/0022-3093(85)90826-9