Study of point defect clusters in high purity single crystals of silicon grown by Czochralski and float-zone methods by diffuse X-ray scattering technique

  • Ramanan R
  • Bhagavannarayana G
  • Lal K
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Results of study of point defect clusters in high purity (∼ 10 kΩ · cm) dislocation-free Czochralski (Cz) and float-zone (FZ) grown crystals (∼ 50 mm diameter, 11 mm thick, p-type) are reported. A multicrystal X-ray diffractometer set in (+, -, -, +) geometry and employing a well-collimated Mo Kα1beam was used. High resolution X-ray diffractometry, absolute integrated intensity measurements and diffuse X-ray scattering (DXS) measurements were carried out. The specimens gave sharp diffraction curves and the integrated intensities were found to be close to the theoretical value for an ideally perfect silicon crystal. DXS measurements were made around 111 reciprocal lattice point (RLP) along four directions of K* : [111], [1̄1̄1̄], [01̄1] and [011̄]. K* is the vector which connects the elemental reciprocal volume under investigation with the nearest RLP. From the analysis of the DXS intensity versus K* plots, it was found that the source of DXS is interstitial defect clusters in Cz-grown crystals and vacancy defect clusters in FZ-grown crystals. By using a phenomenological model, the values of cluster size Rcl, cluster volume Acland number of defects per cluster Ncl, respectively, were found to be: 0.8 μm, 2.02 × 10-16cm3, 1.26 × 106for Cz specimen and 0.6 μm, 1.32 × 10-16cm3, 8.3 × 105for the FZ specimen. © 1995.

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  • R. R. Ramanan

  • G. Bhagavannarayana

  • Krishan Lal

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