We summarize our recent results on thickness and surface variations in the conductivity and photoconductivity of phosphorus-doped n-type hydrogenated amorphous silicon films. Our principal finding is that thinner films have lower conductivities, higher activation energies and, for a certain range of thicknesses, higher photoconductivities. A speculation is given for the origin of the enhanced photoconductivity in terms of field-assisted carrier separation in the surface barrier region. © 1980.
Brodsky, M. H., Evangelisti, F., Fischer, R., Johnson, R. W., Reuter, W., & Solomon, I. (1980). Thickness-dependent conductivity and photoconductivity of hydrogenated amorphous silicon. Solar Cells, 2(4), 401–406. https://doi.org/10.1016/0379-6787(80)90015-0