Transport and relaxation properties of photo-induced carriers in amorphous Si based films with artificail potential structure

Abstract

The artificial structures with a-SixGe1-xH(F) alloy, i.e., compositional gradient and modulation doping ninimultilayer were investigated with regard either the carrier transport or the relation of photo-induced carriers. A limited compositional gradient, dV/dX < 5×103eV/cm, contributes to remove the unfavourable space charge effect at the interfaceof by the internal field. Light-induced "barrier-modulation" was found in Schottky diode made of the modulation doping ninimultilayer film, which led to a high photoconductive gain above 10. © 1987.