Two 3-D position-sensitive room temperature semiconductor γ-ray spectrometers have been built using 1 cm3 cubic CdZnTe crystals. The lateral coordinates of γ-ray interaction are obtained from the location of the 11(x) × 11(y) pixellated anodes and the depth (z) is obtained from the ratio of the signals coming from the cathode and the anode. Energy spectra from 662 keV incident γ-rays have been collected from each of the 11 (x) × 11 (y) × 20 (z) voxels in both of the CdZnTe devices. After corrections for electron trapping, the difference of weighting potentials in 3-D, and for the gain variation of the readout circuitry, energy resolutions of 1.70% (11.3 keV) FWHM and 1.84% (12.2 keV) FWHM were obtained at 662 keV γ-ray energy on the first and second detectors, respectively, from the whole bulk for single-pixel events. Possible improvements in the detector performance are discussed. © 1999 Elsevier Science B.V. All rights reserved.
CITATION STYLE
He, Z., Li, W., Knoll, G. F., Wehe, D. K., Berry, J., & Stahle, C. M. (1999). 3-D position sensitive CdZnTe gamma-ray spectrometers. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 422(1–3), 173–178. https://doi.org/10.1016/S0168-9002(98)00950-4
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