40 Gb/s silicon photonics modulator for TE and TM polarisations.

  • Gardes F
  • Thomson D
  • Emerson N
 et al. 
  • 85

    Readers

    Mendeley users who have this article in their library.
  • 120

    Citations

    Citations of this article.

Abstract

A key device in future high speed short reach interconnect technology will be the optical modulator. These devices, in silicon, have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Here we describe an approach based on a self-aligned wrap around p-n junction structure embedded in a silicon waveguide that can produce high-speed optical phase modulation, whilst at the same time, capable of a high extinction ratio. An all-silicon optical modulator using a CMOS compatible fabrication process with a data rate of 40 Gb/s and extinction ratio up to approximately 6.5 dB for TE and TM polarisations is demonstrated. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to simplify and improve the reliability of, the fabrication process.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • F Y Gardes

  • D J Thomson

  • N G Emerson

  • G T Reed

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free