Ballistic hole transport in a quantum wire

Abstract

We report ballistic hole conduction in 2 μm long GaAs quantum wires of nominal cross-section 15 nm by 15 nm. In each of eight test wires, we observe several quantized conduction steps of approximate height 0.77 e2 h. The wires were fabricated using the cleaved edge overgrowth molecular-beam epitaxy process, and the modulation-doped acceptors were incorporated using a carbon filament as the source of atomic carbon. © 2005 American Institute of Physics.