We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized. © 2011 IEEE.
CITATION STYLE
Awano, Y., Sato, S., Nihei, M., Sakai, T., Ohno, Y., & Mizutani, T. (2011). Carbon nanotubes for VLSI: Interconnect and transistor applications. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings (pp. 10–11). https://doi.org/10.1109/VTSA.2011.5872210
Mendeley helps you to discover research relevant for your work.