Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4

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Abstract

High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state. © 2008 The American Physical Society.

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Klein, A., Dieker, H., Späth, B., Fons, P., Kolobov, A., Steimer, C., & Wuttig, M. (2008). Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4. Physical Review Letters, 100(1). https://doi.org/10.1103/PhysRevLett.100.016402

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