Chloride Ion Mediated Synthesis of Metal/Semiconductor Hybrid Nanocrystals

Abstract

A synthetic route to prepare metal-semiconductor hybrid nanoparticles is presented, along with the possibility to tune the ratio of primary to secondary nucleation and the morphology of the semiconductor material grown on the metal nanoparticle seeds. Gold and cobalt-platinum nanoparticles are employed as metal seeds, on which CdS or CdSe is grown. Using transmission electron microscopy, absorption spectroscopy (UV-vis), and powder X-ray diffraction as characterization techniques, a significant influence of chloride ions on the type of nucleation (that is, secondary or primary nucleation) as well as on the shape of the resulting heterostructures is observed. Partially replacing the commonly used cadmium precursor CdO by varying amounts of CdCl2 opens access to rod-like, multiarmed, flower-like, and bullet-like structures. The results suggest that neither pure CdO nor pure CdCl2 as precursors but only a mixture of both make these structures obtainable. In this article, the influence of the chloride ion concentration during semiconductor growth on metal seeds is investigated in depth. The morphology of the resulting heterostructures is characterized carefully, and a growth mechanism is suggested. Furthermore, it is shown that this synthetic approach can be transferred to seeds of various metals such as platinum, gold, and cobalt platinum. Metal-semiconductor hybrid nanoparticles are synthesized via a seed mediated growth approach. The addition of chloride ions is the essential step to suppress primary nucleation in the process of growing cadmium sulfide or selenide on gold or other metal nanoparticles. Furthermore, these chloride ions give the opportunity to tune the shape of the semiconductor domain.