Dependence of the critical thickness on Si doping of InGaAs on GaAs

Abstract

The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4 × 1018 atoms/cm3, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews-Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration. © 2000 American Institute of Physics.