A novel packaging structure which is performed using wafer level
micropackaging on the thin silicon substrate as the distributed RF MEMS
phase shifters wafer with vertical feedthrough is presented. The
influences of proposed structure on RF performances of distributed RF
MEMS phase shifters are investigated using microwave studio (CST).
Simulation results show that the insertion loss (S-21) and return loss
(S-11) of packaged MEMS phase shifters are -0.4-1.84 dB and under -10 dB
at 1-50 GHz, respectively. Especially, the phase shifts have well linear
relation at the range 1-48 GHz. At the same time, this indicated that
the proposed pacakaging structure for the RF MEMS phase shifter can
provide the maximum amount of linear phase shift with the minimum amount
of insertion loss and return loss of less than -10 dB.
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