In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at VDS=-0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at VDS=-0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.
CITATION STYLE
Rajamohanan, B., Mohata, D., Zhu, Y., Hudait, M., Jiang, Z., Hollander, M., … Datta, S. (2014). Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors. Journal of Applied Physics, 115(4). https://doi.org/10.1063/1.4862042
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