Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments

  • Streiffer S
  • Parker C
  • Romanov A
 et al. 
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Possible domain patterns are developed for (001) oriented (pseudocubic
indexing) epitaxial rhombohedral perovskite ferroelectric (F-R) films.
We assume that the films are grown above their Curie temperature
(T-C) in a cubic paraelectric (P-C) state, The rhombohedral distortion
consists of a "stretch" along one of the four [111] crystallographic
directions of the cubic perovskite unit cell. Domain pattern formation
is concurrent with the P-C-->F-R transformation on cooling from the
growth temperature. The domain patterns form to minimize elastic
energy in the film, at the energetic expense of both forming domain
boundaries and developing local stresses in the substrate. Eight
possible domains may form, half of which are related by inversion,
thus leading to four mechanically distinct variants. The possible
domain walls are determined by mechanical and charge compatibility
and follow closely from the analysis of Fousek and Janovec [J. Appl.
Phys. 40, 135 (1969)]. Domain patterns may develop with either {100}
or {101} boundaries. In both cases, the individual domains in the
patterns are energetically degenerate and thus equal width lamellar
patterns are predicted. When polarization is included in the analysis,
the {100} boundary patterns have no normal component of the net polarization,
whereas the {101} boundary patterns correspond to the fully poled
state. We report on experimental observation of {100} domain patterns
in epitaxial PbZr0.80Ti0.20O3 and PbZr0.65Ti0.35O3 films. (C) 1998
American Institute of Physics.

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