Electron spin relaxation under drift in GaAs E. A. Barry, A. A. Kiselev, and K. W. Kim Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911 (Received 26 November 2002; accepted 26 March 2003) Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or nonzero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly with the drift field, scaling as the square of the electron wave vector in the direction of the field. When the electrons are injected with a high energy, a pronounced decrease is observed in the spin relaxation length due to an initial increase in the spin precession frequency. Hence, high-field or high-energy transport conditions may not be desirable for spin-based devices. ©2003 American Institute of Physics. doi:10.1063/1.1578180 PACS: 75.47.Pq, 72.20.Jv, 72.80.Ey Additional Information Full Text: [ HTML Sectioned HTML PDF (128 kB) GZipped PS ] Order References Citation links [e.g., Phys. Rev. D 40, 2172 (1989)] go to online journal abstracts. Other links (see Reference Information) are available with your current login. Navigation of links may be more efficient using a second browser window. G. A. Prinz, J. Magn. Magn. Mater. 200, 57 (1999). [INSPEC] S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1488 (2001). E. I. Rashba, J. Supercond. 15, 13 (2002). [INSPEC] J. M. Daughton, J. Magn. Magn. Mater. 192, 334 (1999). [INSPEC] R. L. Comstock, J. Mater. Sci.: Mater. Electron. 9, 509 (2002). See, for example, S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990). G. E. Pikus and A. N. Titkov, in Opticheskaya Orientatsiya [Optical Orientation], edited by F. Meier and B. P. Zakharchenya (Nauka, Leningrad, 1989). A. A. Kiselev and K. W. Kim, Phys. Rev. B 61, 13115 (2000). J. Fabian and S. Das Sarma, J. Vac. Sci. Technol. B 17, 1708 (1999). P. H. Song and K. W. Kim, Phys. Rev. B 66, 035207 (2002). M. I. D'yakonov and V. I. Perel, Fiz. Tverd. Tela (Leningrad) 13, 3581 (1971) [INSPEC][Sov. Phys. Solid State 13, 3023 (1972)]. H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 81, 2788 (2002). The effect of nonparabolic energy band in Eq. (6) may be nonzero even at very small electric fields due to the finite average electron energy. For the average electron energy as a function of applied electric field, see K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices (Artec House, Norwood, MA, 1993), p. 102. E. I. Rashba, Phys. Rev. B 62, R16267 (2000).
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