Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

  • Dingemans G
  • van de Sanden M
  • Kessels W
  • 58

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Abstract

It is demonstrated that the application of an ultrathin aluminum oxide (Al2O3) capping film can improve the level of silicon surface passivation obtained by low-temperature synthesized SiO2 profoundly. For such stacks, a very high level of surface passivation was achieved after annealing, with S-eff < 2 cm/s for 3.5 Omega cm n-type c-Si. This can be attributed primarily to a low interface defect density (D-it < 10(11) eV(-1) cm(-2)). Consequently, the Al2O3 capping layer induced a high level of chemical passivation at the Si/SiO2 interface. Moreover, the stacks showed an exceptional stability during high-temperature firing processes and therefore provide a low temperature (

Author-supplied keywords

  • Aluminium oxide
  • Atomic layer deposition
  • Si
  • Silicon oxide
  • Solar cells
  • Surface passivation
  • aluminium oxide
  • atomic layer deposition
  • si
  • silicon oxide
  • solar cells
  • surface passivation

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Authors

  • G. Dingemans

  • M. C. M. van de Sanden

  • W. M. M. Kessels

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