Growth of Cd1-xZnxTe crystals with different x values and their qualities comparison

  • Li G
  • Jie W
  • Gu Z
 et al. 
  • 9


    Mendeley users who have this article in their library.
  • 20


    Citations of this article.


Three Cd1-xZnxTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by vertical Bridgman method (VBM). Characterization indicated that Cd0.85Zn0.15Te possessed preferable qualities. It had low radial Zn concentration deviation, low densities of dislocation and Te precipitate/inclusion, and high infrared transmission. What is more, Cd0.85Zn0.15Te obtained the highest resistivity, which was about one order higher than both Cd0.9Zn0.1Te and Cd0.8Zn0.2Te. From the point of the defects and impurities existing in the crystals, as well as the characteristics of the crystal growth by VBM, the opportunity for growth of high-qualities Cd1-xZnxTe was given in this paper. © 2003 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • A1. Characterization
  • A1. Segregation
  • A2. Bridgman technique
  • B2. Semiconducting II-VI materials

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free