Growth of Cd1-xZnxTe crystals with different x values and their qualities comparison

  • Li G
  • Jie W
  • Gu Z
 et al. 
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Abstract

Three Cd1-xZnxTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by vertical Bridgman method (VBM). Characterization indicated that Cd0.85Zn0.15Te possessed preferable qualities. It had low radial Zn concentration deviation, low densities of dislocation and Te precipitate/inclusion, and high infrared transmission. What is more, Cd0.85Zn0.15Te obtained the highest resistivity, which was about one order higher than both Cd0.9Zn0.1Te and Cd0.8Zn0.2Te. From the point of the defects and impurities existing in the crystals, as well as the characteristics of the crystal growth by VBM, the opportunity for growth of high-qualities Cd1-xZnxTe was given in this paper. © 2003 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • A1. Characterization
  • A1. Segregation
  • A2. Bridgman technique
  • B2. Semiconducting II-VI materials

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