Growth of GaN nanotubes by halide vapor phase epitaxy

  • Hemmingsson C
  • Pozina G
  • Khromov S
 et al. 
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Abstract

We have investigated low temperature growth of GaN nanostructures using halide vapor phase epitaxy on c-oriented Al(2)O(3) and Au coated Al(2)O(3) substrates. Depending on the III/V ratio and the growth temperature, the shape and density of the structures could be controlled. By increasing the GaCl partial pressure, the structure changed from dot-like to nanotubes. The nanotubes, which could be open or closed, were about 1 µm long with a diameter of typically 200 nm. In addition, it was observed that the nanostructures were spontaneously nucleated at droplets of Ga or, when using Au coated Al(2)O(3), on droplets of Au/Ga alloy. By varying the growth temperature, the inner diameter of the nanotubes could be controlled. The experimental results suggest that this approach with pre-patterned Au coated Al(2)O(3)substrates has the potential for fabrication of well-organized nanotubes with a high density.

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