Growth of ultralong ZnO nanowires on silicon substrates by vapor transport and their use as recyclable photocatalysts

  • Kuo T
  • Lin C
  • Kuo C
 et al. 
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Abstract

We report the growth of ultralong ZnO nanowires on silicon (100)
substrates via the gold-catalyzed vapor transport approach. An ample
supply of zinc vapor generated through carbothermal reduction of ZnO
powder at 917 degrees C and a suitable amount of oxygen facilitate the
rapid growth of nanowires. These ZnO nanowires are extremely long with
lengths of 85 - 1 00,mu m, and exhibit an overall vertical orientation.
The nanowires have largely diameters of 250-400 nm. Crystal structure
analysis indicates typical ZnO nanowire growth along the {[}0001]
direction. The band gap of these nanowires was determined to be 3.22 eV.
These nanowires show a relatively weak near-band-edge emission peak at
390 nm, and a significant oxygen vacancy-related emission band at 495
nm. Good photocatalytic activity of these nanowires on substrates toward
the photodegradation of rhodamine B and 4-chlorophenol was demonstrated.
Furthermore, we showed that these nanowires on substrates can serve as
effective and convenient recyclable photocatalysts. Only a slight
decrease in the photodecomposition rate was observed after 10 cycles of
the photocatalysis experiment. The photocatalysts also work well under
natural sunlight.

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Authors

  • Tz Jun Kuo

  • Chun Neng Lin

  • Chi Liang Kuo

  • Michael H. Huang

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