High-efficiency p-i-n a-Si:H solar cells with low boron cross-contamination prepared in a large-area single-chamber PECVD reactor

  • Kroll U
  • Bucher C
  • Benagli S
 et al. 
  • 26

    Readers

    Mendeley users who have this article in their library.
  • 47

    Citations

    Citations of this article.

Abstract

In this work, a new type of short water vapor treatment of the interface between the p- and i-layer is presented. This novel treatment is performed under vacuum below 1 mbar for 5 min and considerably reduces the i-layer boron contamination in amorphous silicon (a-Si:H) p-i-n solar cells prepared in single-chamber reactors. A significant advantage is that the substrate with the p-layer can remain loaded in the reactor during this oxidation treatment. The high effectiveness of this treatment in reducing the boron cross-contamination is directly supported by secondary ion mass spectroscopy measurements, by tracing the boron concentration depth profile across the p-i interface and by quantum efficiency measurements of the deposited cells. By applying this water vapor treatment, 0.3-μm-thick a-Si:H p-i-n solar cells of 1 cm2with high initial conversion efficiencies of 10.1% are deposited in a commercial large-area (35×45 cm2) single-chamber PECVD KAI™ reactor and can clearly compete with cells deposited in multi-chamber systems. Light soaking of these cells for 1200 h at 50 °C leads to stabilized efficiencies of 8.2%. The relative typical efficiency degradation of 20% of such 0.3-μm-thick single-junction cells demonstrates that this treatment does not affect the stability in a negative manner. © 2003 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Amorphous silicon
  • Boron contamination
  • PECVD
  • Single-chamber process
  • Solar cells

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • U. Kroll

  • C. Bucher

  • S. Benagli

  • I. Schönbächler

  • J. Meier

  • A. Shah

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free