An organic transistor having a novel structure, step-edge vertical-channel organic field-effect transistor (SVC-OFET), with a short channel length has been fabricated by a low-cost self-alignment process. The short channel is formed in the vertical direction along the side wall of a step-edge structure. The SVC-OFET structure also has an advantage in reducing the parasitic capacitance between the gate and drain electrodes. A short channel and reduced capacitance are important properties for a high-speed operation. The cutoff frequency achieved was approximately 900 kHz, which is a very high value for organic transistors. ©2009 The Japan Society of Applied Physics.
CITATION STYLE
Takano, T., Yamauchi, H., Iizuka, M., Nakamura, M., & Kudo, K. (2009). High-speed operation of vertical type organic transistors utilizing step-edge structures. Applied Physics Express, 2(7). https://doi.org/10.1143/APEX.2.071501
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