The femtosecond dynamics of the nonlinear transmission and reflectivity in films of GaAs are investigated. Both nonlinear optical responses are required to determine carrier-induced absorption changes. This has significant implications on the interpretaton of spectral hole burning experiments in semiconductors. © 1994.
CITATION STYLE
Hunsche, S., Heesel, H., & Kurz, H. (1994). Influence of reflectivity on femtosecond transmission spectroscopy of thin GaAs films. Optics Communications, 109(3–4), 258–264. https://doi.org/10.1016/0030-4018(94)90690-4
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