p-i-n photodiodes with ND as low as 1Â¿2Ã1015 cmÂ¿3 in the I-region were fabricated from InGaAsP (Â¿=1.26 Â¿m). At Â¿20 V, the 2.5 Â¿m I-region of the 150 Â¿m diameter mesas was completely swept out, the junction capacitance was below 1 pF, the dark current was less than 0.2 nA and the external quantum efficiency was 63% without a.r. coatings.
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