InGaAsP p-i-n photodiodes with low dark current and small capacitance

  • Burrus, C.A.; Dentai, A.G.; Lee T
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p-i-n photodiodes with ND as low as 1¿2×1015 cm¿3 in the I-region were fabricated from InGaAsP (¿=1.26 ¿m). At ¿20 V, the 2.5 ¿m I-region of the 150 ¿m diameter mesas was completely swept out, the junction capacitance was below 1 pF, the dark current was less than 0.2 nA and the external quantum efficiency was 63% without a.r. coatings.

Author-supplied keywords

  • InGaAsP p-i-n photodiodes
  • MM waves
  • carrier concentration
  • dark current
  • junction capacitance
  • leakage current
  • optical communication equipment
  • photodiodes
  • quantum efficiency

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  • T.P. Burrus, C.A.; Dentai, A.G.; Lee

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