Integrated complementary graphene inverter

Abstract

The operation of a digital logic inverter consisting of one p - and one n -type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. Both transistors initially exhibited p -type behavior at low gate voltages, since air contamination shifted their Dirac points from zero to a positive gate voltage. Contaminants in one transistor were removed by electrical annealing, which shifted its Dirac point back and therefore restored n -type behavior. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step toward the development of digital integrated circuits on graphene. © 2009 American Institute of Physics.