Long silicon nitride (Si3N4) nanowires with high purity were synthesized by heating mixtures of SiO2 powders and short carbon fibers at 1430 degrees C for 2 h in a flowing N-2 atmosphere. The nanowires had the length of 1-2 millimeters and the diameters of 70-300 nm, and were mainly composed of alpha-Si3N4, growing along the 001 direction. The vapor-solid (VS) mechanism was employed to interpret the nanowires growth.
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