Long silicon nitride nanowires synthesized in a simple route

  • Li G
  • Li X
  • Wang H
 et al. 
  • 4


    Mendeley users who have this article in their library.
  • 19


    Citations of this article.


Long silicon nitride (Si3N4) nanowires with high purity were synthesized by heating mixtures of SiO2 powders and short carbon fibers at 1430 degrees C for 2 h in a flowing N-2 atmosphere. The nanowires had the length of 1-2 millimeters and the diameters of 70-300 nm, and were mainly composed of alpha-Si3N4, growing along the 001 direction. The vapor-solid (VS) mechanism was employed to interpret the nanowires growth.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free