Abstract
We have designed new process architecture for high-density magneto-resistive random access memory (MRAM). One of the major issues in fabricating high-density MRAM is how to prevent the electrical short through the tunnel barrier without any kind of degradation of the characteristics of small magnetic tunnel junction (MTJ) devices. We have developed a novel MTJ patterning technique that involves removing the residual free layer by wet-chemical treatments after partial RIE process. Additional degradation of MTJ devices in post-patterning should be minimized. © 2004 Published by Elsevier B.V.
Author supplied keywords
Cite
CITATION STYLE
Oh, J. H., Park, J. H., Kim, H. J., Jeong, W. C., Koh, G. H., Jeong, G. T., … Kim, K. (2004). A novel process for highly manufacturable MRAM. In Journal of Magnetism and Magnetic Materials (Vol. 272–276, pp. 1936–1938). Elsevier. https://doi.org/10.1016/j.jmmm.2003.12.1190
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
