Thin films of AlN were grown on glass and aluminum foil substrates by reactive dc magnetron sputtering. The films exhibit a columnar growth with surface roughness in the order of 8.8-5.2 nm. The optical and dielectric properties of the films were studied as a function of the nitrogen concentration in the reactive gas mixture. The refractive index and extinction coefficient were found to be in the range of 1.93 to 2.3 and 10-4-10-3at λ = 520 nm. The real part of dielectric constant and dielectric losses were measured to be about 7.0 and 0.006-0.085, respectively, using metal-insulator-metal (MIM) structures.
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