Clean ZnO (0001) Zn- and (0001¯) O-polar surfaces and metal interfaces have been systematically studied by depth-resolved cathodoluminescence spectroscopy, photoluminescence, current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy. Zn-face shows higher near band edge emission and lower near surface defect emission. Even with remote plasma decreases of the 2.5eV near surface defect emission, (0001)-Zn face emission quality still exceeds that of (0001¯)-O face. The two polar surfaces and corresponding metal interfaces also present very different luminescence evolution under low-energy electron beam irradiation. Ultrahigh vacuum-deposited Au and Pd diodes on as-received and O2∕He plasma-cleaned surfaces display not only a significant metal sensitivity but also a strong polarity dependence that correlates with defect emissions, traps, and interface chemistry. Pd diode is always more leaky than Au diode due to the diffusion of H, while Zn-face is better to form Schottky barrier for Au compared with O-face. A comprehensive model accounts for the metal-and polarity-dependent transport properties.
CITATION STYLE
Dong, Y., Fang, Z.-Q., Look, D. C., Doutt, D. R., Hetzer, M. J., & Brillson, L. J. (2009). Polarity-related asymetry at ZnO surfaces and metal interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 27(3), 1710–1716. https://doi.org/10.1116/1.3119681
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