Materials with a low dielectric constant are required as interlayer dielectrics for the on-chip interconnection of ultra-large-scale integration devices to provide high speed, low dynamic power dissipation and low cross-talk noise. The selection of chemical compounds with low polarizability and the introduction of porosity result in a reduced dielectric constant. Integration of such materials into microelectronic circuits, however, poses a number of challenges, as the materials must meet strict requirements in terms of properties and reliability. These issues are the subject of the present paper. © 2005 The Royal Society.
CITATION STYLE
Baklanov, M. R., & Maex, K. (2006). Porous low dielectric constant materials for microelectronics. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 364(1838), 201–215. https://doi.org/10.1098/rsta.2005.1679
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