Probing the surface states in Bi2Se3 by Shubnikov-de Haas effect

  • Petrushevsky M
  • Diamant I
  • Lahoud E
  • et al.
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Abstract

Shubnikov-de Haas oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. A pi Berry phase is observed, supplying transport evidence of the surface Dirac cone. The Fermi momentum obtained is in agreement with ARPES measurements performed on crystals from the same batch.

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Petrushevsky, M., Diamant, I., Lahoud, E., Chashka, K., Kanigel, A., & Dagan, Y. (2011). Probing the surface states in Bi2Se3 by Shubnikov-de Haas effect. Physics, 045131(4), 4. Retrieved from http://arxiv.org/abs/1106.3747

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