Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires

  • Wallentin J
  • Mergenthaler K
  • Ek M
 et al. 
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Abstract

We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).

Author-supplied keywords

  • Nanowire MOVPE
  • doping
  • photoluminescence
  • wurtzite

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Authors

  • Martin EkLund University

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  • Jesper Wallentin

  • Kilian Mergenthaler

  • L. Reine Wallenberg

  • Lars Samuelson

  • Knut Deppert

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